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Datasheet GAP3SHT33-CAU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GAP3SHT33-CAU | Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode
Features
• 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAU
VRRM IF @ 25 oC
QC
= 3300 V = 0.3 A = 20 nC
A |  GeneSiC | diode |
GAP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GAP04N70 | Mini size of Discrete semiconductor elements Mini size m of Discrete semiconductor elements
Diode Rectifier
w
w
at .D w
h S a
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4U
o c .
MOSFET
Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF  ETC data | | |
| 2 | GAP05SLT80-CAL | Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode
Features
8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF
Advantages
Improved circuit efficiency (Lower ov GeneSiC diode | | |
| 3 | GAP07N70 | Mini Size of Discrete Semiconductor Elements Mini size of Discrete semiconductor elements
Diode Rectifier
Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF ( low capacitance ) & Varactor SOT-323 SOT-23 TO-25  Sinyork data | | |
| 4 | GAP3SHT33-CAL | Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode
Features
• 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAL
VRRM IF @ 25 oC
QC
= 3300 V = 0.3 A = 20 nC
A GeneSiC diode | | |
| 5 | GAP3SHT33-CAU | Silicon Carbide Power Schottky Diode Silicon Carbide Power Schottky Diode
Features
• 3300 V Schottky rectifier • 210 °C maximum operating temperature • Positive temperature coefficient of VF • Fast switching speeds • Superior figure of merit QC/IF
Die Datasheet
GAP3SHT33-CAU
VRRM IF @ 25 oC
QC
= 3300 V = 0.3 A = 20 nC
A GeneSiC diode | |
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