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Número de pieza | MTP4409Q8 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTP4409Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C808Q8
Issued Date : 2012.04.03
Revised Date : 2012.11.02
Page No. : 1/9
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4409Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-15A
RDSON@VGS=-4.5V, ID=-10A
-30V
-15A
7.7mΩ(typ)
11.4mΩ(typ)
Description
The MTP4409Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and Halogen-free package
Equivalent Circuit
MTP4409Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTP4409Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C808Q8
Issued Date : 2012.04.03
Revised Date : 2012.11.02
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4 ID=-250μA
1.2
1000
1
C oss
0.8
100
0.1
Crss
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
0.6
0.4
-60
10
8
6
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=-15V
VDS=-10V
VDS=-5V
1
0.1
0.01
1000
VDS=-5V
Pulsed
TA=25°C
0.1 1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
100
10
1
0.1 TA=25°C, Tj=150°C, VGS=-10V
θJA=40°C/W, Single Pulse
0.01
0.1
1 10
-ID, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
4
2
ID=-15A
0
0 15 30 45 60 75
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
18
16
14
12
10
8
6
4
2 TA=25°C, VGS=-10V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTP4409Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTP4409Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTP4409Q8 | P-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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