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PDF MTN2310AN3 Data sheet ( Hoja de datos )

Número de pieza MTN2310AN3
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



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No Preview Available ! MTN2310AN3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 1/9
60V N-Channel Enhancement Mode MOSFET
MTN2310AN3
BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=4A
RDSON@VGS=5V, ID=3A
60V
4.2A
33.7mΩ(typ)
43.1mΩ(typ)
Features
Simple drive requirement
Small package outline
Pb-free lead plating and halogen-free package
Symbol
MTN2310AN3
Outline
SOT-23
D
GGate
SSource
DDrain
S
G
Ordering Information
Device
MTN2310AN3-0-T1-G
Package
Shipping
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2310AN3
CYStek Product Specification

1 page




MTN2310AN3 pdf
CYStech Electronics Corp.
Spec. No. : C109N3
Issued Date : 2015.07.31
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss 0.6 ID=250μA
10
0.1
1 10
VDS, Drain-Source Voltage(V)
0.4
100 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
0.1
0.01
VDS=5V
Pulsed
Ta=25°C
0.1 1
ID, Drain Current(A)
10
10
8
6
4
2
0
0
Gate Charge Characteristics
VDS=15V
VDS=30V
VDS=48V
ID=4A
2 4 6 8 10
Qg, Total Gate Charge(nC)
12
Maximum Safe Operating Area
100
RDSON
10 Limite
100μs
1ms
1
10ms
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=90°C/W
Single Pulse
100ms
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
TA=25°C
VGS=10V
RθJA=90°C/W
50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTN2310AN3
CYStek Product Specification

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