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PDF MTN12N30FP Data sheet ( Hoja de datos )
| Número de pieza | MTN12N30FP | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C993FP
Issued Date : 2014.12.15
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTN12N30FP BVDSS
ID@VGS=10V, TC=25°C
RDSON(TYP)@ VGS=10V, ID=6A
300V
12A
248mΩ
Description
The MTN12N30FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Insulating package, front/back side insulating voltage=2500V(AC)
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Ordering Information
Device
MTN12N30FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN12N30FP
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C993FP
Issued Date : 2014.12.15
Revised Date :
Page No. : 5/ 10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
Crss
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
100
VDS=15V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 Limited
10μs
100μ s
1
TC=25°C, Tj=150°C
VGS=10V, θJC=3.5°C/W
Single Pulse
0.1
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
1000
8
6
4
2 VDS=240V
ID=12A
0
0 5 10 15 20 25
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
14
12
10
8
6
4
2 VGS=10V, RθJC=3.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTN12N30FP
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN12N30FP.PDF ] | |
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