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PDF TMP10N60AG Data sheet ( Hoja de datos )
| Número de pieza | TMP10N60AG | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60A(G)/TMPF10N60A(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
10A <0.7W
D
G
S
Device
TMP10N60A / TMPF10N60A
TMP10N60AG / TMPF10N60AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60A / TMPF10N60A
TMP10N60AG / TMPF10N60AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60A(G) TMPF10N60AG)
600
±30
10 10 *
6.48 6.48 *
40 40 *
660
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60A(G)
0.63
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF10N60A(G)
2.4
62.5
Unit
℃/W
℃/W
1/7
1 page  
TMP10N60A(G)/TMPF10N60A(G)
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
TMP10N60A(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.63 ℃/W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
TMPF10N60A(G)
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.4℃/W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
October 2012 : Rev0
www.trinnotech.com
5/7
5 Page | ||
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| PDF Descargar | [ Datasheet TMP10N60AG.PDF ] | |
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