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PDF TMP10N80G Data sheet ( Hoja de datos )

Número de pieza TMP10N80G
Descripción N-channel MOSFET
Fabricantes TRinno 
Logotipo TRinno Logotipo



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No Preview Available ! TMP10N80G Hoja de datos, Descripción, Manual

Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N80/TMPF10N80
TMP10N80G/TMPF10N80G
VDSS = 880 V @Tjmax
ID = 9.5A
RDS(ON) = 1.05 W(max) @ VGS= 10 V
D
G
Device
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
November 2014 : Rev1.1
Symbol
RqJC
RqJA
www.trinnotech.com
TMP10N80(G) TMPF10N80(G)
800
±30
9.5 9.5 *
6.4 6.4 *
38 38*
231
9.5
29
290
48
2.32 0.38
4.5
-55~150
300
TMP10N80(G)
0.43
62.5
TMPF10N80(G)
2.6
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Unit
/W
/W
1/7

1 page




TMP10N80G pdf
TMP10N80/TMPF10N80
TMP10N80G/TMPF10N80G
Duty=0.5
10-1 0.2
0.1
0.05
0.02
10-2 0.01
TMP10N80(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 0.43 /W Max.
thJC
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
10-4
TMPF10N80(G)
single pulse
PDM
t
T
Duty = t/T
Z (t) = 2.6 /W Max.
thJC
10-3
10-2
10-1
100
101
Pulse Width, t [sec]
November 2014 : Rev1.1
www.trinnotech.com
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