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PDF DSEP6-06AS Data sheet ( Hoja de datos )
| Número de pieza | DSEP6-06AS | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP6-06AS
Marking on Product: 6P060AS
31
DSEP6-06AS
VRRM
I FAV
t rr
=
=
=
600 V
6A
20 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-252 (DPak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110915a
1 page  
DSEP6-06AS
Fast Diode
10
8
IF 6
[A] 4
TVJ =150°C
TVJ =100°C
TVJ = 25°C
2
1000
TVJ = 100°C
VR = 300V
800
Qr 600
[nC] 400
IF = 12A
IF = 6A
IF = 3A
200
30
T = 100°C
VJ
VR = 300V
20
IRM
[A]
10
IF = 12 A
IF = 6 A
IF = 3 A
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current
IF versus VF
0
100 1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.6
1.2
Kf
0.8
IRM
110
100
trr 90
[ns] 80
TVJ = 100°C
VR = 300 V
IF = 12 A
IF = 6 A
IF = 3 A
0.4
Qr
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
70
60
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 5 Recovery time
trr versus -diF /dt
20
15
VFR
10
[V]
TVJ = 100°C
IF = 6A
5
VFR
1.2
0.9
tfr
0.6
[μs]
0.3
tfr
0 0.0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
t [s]
Fig. 7 Transient thermal resistance junction to case
0.1
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110915a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DSEP6-06AS.PDF ] | |
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