Datasheet 1N4004GP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	1N4004GP	General Purpose Rectifiers 1N4001GP-1N4007GP 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. • High reliability. • High current capability. DO-41 COLOR BAND DENOTES CATHODE General Purpose Rectifiers (Glass Passivated) Absolute Maximum Ratings* TA = 25°C unless otherwise	Fairchild Semiconductor	rectifier
2	1N4004GP	Glass Passivated Junction Plastic Rectifiers 1N4001GP THRU 1N4007GP Features 1.0 AMP. Glass Passivated Junction Plastic Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 a High temperature metallurgically bonded construction a Plastic material used carries Underwriters Laboratory Classification 94V-O a Glass passivated cavi	Taiwan Semiconductor	rectifier
3	1N4004GP	Glass Passivated Junction Rectifier 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier SUPERECTIFIER® DO-204AL (DO-41) PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM (8.3 ms sine-wave) 30 A IFSM (square wave tp = 1 ms) 45 A IR 5.0 μA VF 1.1 V TJ max. 175 °C TYPICAL	Vishay	rectifier
4	1N4004GP	Glass Passivated Silicon Rectifier Diodes 1N4001GP ... 1N4007GP 1N4001GP ... 1N4007GP 62.5 -+40..55 Type 5.1-0.1 Version 2013-02-20 Ø 2.6±0.1 Ø 0.77±0.07 Glass Passivated Silicon Rectifier Diodes Glaspassivierte Silizium-Gleichrichterdioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Pl	Diotec	rectifier
5	1N4004GP	SINTERED GLASS JUNCTION PLASTIC RECTIFIER 1N4001GP THRU 1N4007GP SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed	Gulf Semiconductor	rectifier

1N4 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	1N40	Diode, Rectifier	American Microsemiconductor	diode
2	1N40	N-CHANNEL POWER MOSFET 1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta	Unisonic Technologies	mosfet
3	1N4000	10 WATT ZENER DIODES 1N2970 thru 1N3015B and 1N3993 thru 1N4000A 10 WATT ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v	Microsemi Corporation	diode
4	1N4000	Zener Diode, Rectifier S O LID STAT E INC. 1N3993 – 1N4000 Your TOTAL solutions source! 10 WATTS ZENER DIODES DO4 ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "	SOLID STATE	diode
5	1N4000	10W Zener Diodes http://www.Datasheet4U.com	Motorola Semiconductors	diode
6	1N4000	Diode Zener Single 7.5V 20% 10W 2-Pin DO-4	New Jersey Semiconductor	diode
7	1N4000-1	Diode Zener Single 7.5V 10% 10W 2-Pin DO-4	New Jersey Semiconductor	diode

Esta página es del resultado de búsqueda del 1N4004GP. Si pulsa el resultado de búsqueda de 1N4004GP se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap