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PDF SSM04N70BGP-A Data sheet ( Hoja de datos )
| Número de pieza | SSM04N70BGP-A | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM04N70BGP-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-compliant TO-220
G
D
S
TO-220 (suffix P)
DESCRIPTION
The SSM04N70BGP-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
The SSM04N70BGP-A is in TO-220 for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
TSTG
TJ
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘJC
RΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25Ω , IAS= 4A.
9/29/2006 Rev.3.1
www.SiliconStandard.com
Value
650
±30
4
2.5
15
62.5
0.5
100
4
4
-55 to 150
-55 to 150
Value
2
62
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Units
°C/W
°C/W
1 of 7
1 page  
SSM04N70BGP-A
16
I D =4A
14
12 V DS =320V
V DS =400V
10 V DS =480V
8
6
4
2
0
0 5 10 15 20
Q G , Total Gate Charge (nC)
25
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
9/29/2006 Rev.3.1
www.SiliconStandard.com
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