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PDF MS10N80 Data sheet ( Hoja de datos )
| Número de pieza | MS10N80 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Bruckewell | |
| Logotipo |  |
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MS10N80
800V N-Channel MOSFET
Description
The MS10N80 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge : 46nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V
• 100% Avalanche Tested
• RoHS compliant package
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage
ID
IDM
EAS
EAR
IAR
dv/dt
Drain Current -Continuous (TC=25°C)
Drain Current -Continuous (TC=100°C)
Drain Current Pulsed
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C) 44 W
PD
Derating Factor above 25 °C
Value
800
±30
10
6.5
40
960
24
9.2
4.0
60
0.48
Unit
V
V
A
A
A
mJ
mJ
A
V/ns
W
W/°C
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014
1 page  
MS10N80
800V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS10N80]
© Bruckewell Technology Corporation Rev. A -2014
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MS10N80.PDF ] | |
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