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PDF PZT2222A Data sheet ( Hoja de datos )
| Número de pieza | PZT2222A | |
| Descripción | General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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1. PZT2222A  Hay una vista previa y un enlace de descarga de PZT2222A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Elektronische Bauelemente
RoHS Compliant Product
PZT2222A
NPN Silicon
General Purpose Transistor
C
FEATURES
Power dissipation
C
B
P CM : 1 W˄Tamb=25ć˅
Collector current
I CM : 0.6 A
Collector-base voltage
V (BR)CBO : 75 V
Operating and storage junction temperature range
T JˈTstg: -55ć to +150ć
E
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER
f
5
5
0D[
efe
efe
f
efe
f
123
Unit : mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol
Test conditions
MIN MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 10Aˈ IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mAˈ IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10Aˈ IC=0
6
Collector cut-off current
ICBO VCB=60V , IE=0
0. 01
Emitter cut-off current
IEBO VEB= 3V , IC=0
0. 01
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
hFE(4)
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
75
100
300
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB= 15mA
1
0.3
Base-emitter saturation voltage
VBE(sat)
VBE(sat)
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
0.6
2.0
1.2
Transition frequency
VCE=20V, IC= 20mA
fT f=100MHz
300
Output Capacitance
VCB=10V, IE= 0
Cob f=1MHz
8
Delay time
Rise time
Storage time
Fall time
td VCC=30V, IC=150mA
tr VBE(off)=0.5V,IB1=15mA
tS VCC=30V, IC=150mA
tf IB1= IB2= 15mA
10
25
225
60
UNIT
V
V
V
A
A
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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| PDF Descargar | [ Datasheet PZT2222A.PDF ] | |
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