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Datasheet KDB5690 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1KDB5690N-Channel PowerTrench MOSFET

SMD Type TransistIoCrs N-Channel PowerTrenchTMMOSFET KDB5690 Features 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode tra
Kexin
Kexin		mosfet


KDB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1KDB15N50N-Channel SMPS Power MOSFET

SMD Type MOSFET N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +
Kexin
Kexin		mosfet
2KDB2532N-Channel PowerTrench MOSFET

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2532(FDB2532) Features rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.
Kexin
Kexin		mosfet
3KDB2552N-Channel PowerTrench MOSFET

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2552(FDB2552) Features rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.
Kexin
Kexin		mosfet
4KDB2570N-Channel PowerTrench MOSFET

SMD Type MOSFET 150V N-Channel PowerTrench MOSFET KDB2570(FDB2570) Features 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2
Kexin
Kexin		mosfet
5KDB2572N-Channel PowerTrench MOSFET

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1
Kexin
Kexin		mosfet
6KDB2670N-Channel PowerTrench MOSFET

SMD Type MOSFET 200V N-Channel PowerTrench MOSFET KDB2670(FDB2670) Features 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.
Kexin
Kexin		mosfet
7KDB3632N-Channel PowerTrench MOSFET

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3632(FDB3632) Features rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0
Kexin
Kexin		mosfet



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