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What is N-HFA15TB60?

This electronic component, produced by the manufacturer "nELL", performs the same function as "Ultrafast Soft Recovery Diode".


N-HFA15TB60 Datasheet PDF - nELL

Part Number N-HFA15TB60
Description Ultrafast Soft Recovery Diode
Manufacturers nELL 
Logo nELL Logo 


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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V
and 15 A continuous current, the HFA15TB60 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to “snap-off” during
the tb portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15TB60
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
cathode
2
13
Cathode Anode
TO-220AC
PRODUCT SUMMARY
VR
VF at 15A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
Available
RoHS*
COMPLIANT
600 V
1.7 V
15 A
19 ns
150 °C
84 nC
188 A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC= 100 ºC
TC= 25 ºC
TC = 100 ºC
VALUES
600
15
150
60
74
29
- 55 to 150
UNITS
V
A
W
ºC
www.nellsemi.com
Page 1 of 6

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N-HFA15TB60 equivalent
SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig.10 Reverse Recovery Waveform and Definitions
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M /dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50RIRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x lRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
www.nellsemi.com
Page 5 of 6


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Part NumberDescriptionMFRS
N-HFA15TB60The function is Ultrafast Soft Recovery Diode. nELLnELL

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